Effect of electric field on defect generation and migration in HfO 2 (2020)

First Author: Strand J
Attributed to:  Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.102.014106

Publication URI: http://dx.doi.org/10.1103/physrevb.102.014106

Type: Journal Article/Review

Parent Publication: Physical Review B

Issue: 1