Disorder-induced electron and hole trapping in amorphous TiO 2 (2020)

First Author: Mora-Fonz D
Attributed to:  Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.102.054205

Publication URI: http://dx.doi.org/10.1103/physrevb.102.054205

Type: Journal Article/Review

Parent Publication: Physical Review B

Issue: 5