New approaches for achieving more perfect transition metal oxide thin films (2020)
Attributed to:
ECCS - EPSRC Development of uniform, low power, high density resistive memory by vertical interface and defect design
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/5.0003268
Publication URI: http://dx.doi.org/10.1063/5.0003268
Type: Journal Article/Review
Parent Publication: APL Materials
Issue: 4