Multilevel Resistance Switching and Enhanced Spin Transition Temperature in Single- and Double-Molecule Spin Crossover Nanogap Devices (2020)

First Author: Gee A

Attributed to: Spintronics at Leeds funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acs.jpcc.0c03824

Publication URI: http://dx.doi.org/10.1021/acs.jpcc.0c03824

Type: Journal Article/Review

Parent Publication: The Journal of Physical Chemistry C

Issue: 24