Dynamic Gate Stress Induced Threshold Voltage Drift of Silicon Carbide MOSFET (2020)
Attributed to:
Modelling, Optimisation and Design of Conversion for Offshore Renewable Energy (UK-China MOD-CORE)
funded by
Newton Fund
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2020.3007626
Publication URI: http://dx.doi.org/10.1109/led.2020.3007626
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 9