Interlayer Band-to-Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field-Effect Transistors (2020)
Attributed to:
Two dimensional III-VI semiconductors and graphene-hybrid heterostructures
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/adfm.201910713
Publication URI: http://dx.doi.org/10.1002/adfm.201910713
Type: Journal Article/Review
Parent Publication: Advanced Functional Materials
Issue: 15