All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates (2020)

First Author: Yang J
Attributed to:  Compound Semiconductor Underpinning Equipment funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/abbb49

Publication URI: http://dx.doi.org/10.1088/1361-6463/abbb49

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 3