Tuning the high-? oxide (HfO2, ZrO2)/4H-SiC interface properties with a SiO2 interlayer for power device applications (2020)

First Author: Wang Z
Attributed to:  Integration of Novel Materials in Spintronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.apsusc.2020.146843

Publication URI: http://dx.doi.org/10.1016/j.apsusc.2020.146843

Type: Journal Article/Review

Parent Publication: Applied Surface Science