📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Tuning the high-? oxide (HfO2, ZrO2)/4H-SiC interface properties with a SiO2 interlayer for power device applications (2020)

First Author: Wang Z

Attributed to: Integration of Novel Materials in Spintronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.apsusc.2020.146843

Publication URI: http://dx.doi.org/10.1016/j.apsusc.2020.146843

Type: Journal Article/Review

Parent Publication: Applied Surface Science