Composition-Gradient-Mediated Semiconductor-Metal Transition in Ternary Transition-Metal-Dichalcogenide Bilayers. (2020)
Attributed to:
Support for the UKCP consortium
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1021/acsami.0c13104
PubMed Identifier: 32914966
Publication URI: http://europepmc.org/abstract/MED/32914966
Type: Journal Article/Review
Volume: 12
Parent Publication: ACS applied materials & interfaces
Issue: 40
ISSN: 1944-8244