Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors (2020)

First Author: Wach F
Attributed to:  GaN Electronics: RF Reliability and Degradation Mechanisms funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2020.3030341

Publication URI: http://dx.doi.org/10.1109/led.2020.3030341

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 12