Optoelectronic properties of ultrathin ALD silicon nitride and its potential as a hole-selective nanolayer for high efficiency solar cells (2020)
Attributed to:
Black Silicon Photovoltaics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/5.0023336
Publication URI: http://dx.doi.org/10.1063/5.0023336
Type: Journal Article/Review
Parent Publication: APL Materials
Issue: 11