📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal (2021)

First Author: Renz A

Attributed to: Ultra-high voltage (>30KV) power devices through superior materials for HVDC transmission funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.mssp.2020.105527

Publication URI: http://dx.doi.org/10.1016/j.mssp.2020.105527

Type: Journal Article/Review

Parent Publication: Materials Science in Semiconductor Processing