The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal (2021)
Attributed to:
Ultra-high voltage (>30KV) power devices through superior materials for HVDC transmission
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.mssp.2020.105527
Publication URI: http://dx.doi.org/10.1016/j.mssp.2020.105527
Type: Journal Article/Review
Parent Publication: Materials Science in Semiconductor Processing