Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects (2020)

First Author: Pinchbeck J
Attributed to:  Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/abcb34

Publication URI: http://dx.doi.org/10.1088/1361-6463/abcb34

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 10