49dB depletion-load amplifiers with polysilicon source-gated transistors (2019)
Attributed to:
Nanoelectronic circuits and devices
funded by
NERC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/essderc.2019.8901692
Publication URI: http://dx.doi.org/10.1109/essderc.2019.8901692
Type: Conference/Paper/Proceeding/Abstract