A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors. (2020)

Abstract

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Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1126/sciadv.aaz4948

PubMed Identifier: 32300658

Publication URI: http://europepmc.org/abstract/MED/32300658

Type: Journal Article/Review

Volume: 6

Parent Publication: Science advances

Issue: 15

ISSN: 2375-2548