Impact of Gate Edge Roughness Variability on FinFET and Gate-All-Around Nanowire FET (2019)
Attributed to:
Modelling of Carrier Transport in Ultra Thin Body Transistors
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/led.2019.2900494
Publication URI: http://dx.doi.org/10.1109/led.2019.2900494
Type: Journal Article/Review
Parent Publication: IEEE Electron Device Letters
Issue: 4