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Bias Temperature Instability and Junction Temperature Measurement Using Electrical Parameters in SiC Power MOSFETs (2021)

First Author: Gonzalez J

Attributed to: Reliability, Condition Monitoring and Health Management Technologies for WBG Power Modules funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tia.2020.3045120

Publication URI: http://dx.doi.org/10.1109/tia.2020.3045120

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Industry Applications

Issue: 2