Characterization of trap states in buried nitrogen-implanted ß -Ga2O3 (2020)

First Author: Mishra A
Attributed to:  Materials and Devices for Next Generation Internet (MANGI) funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0031480

Publication URI: http://dx.doi.org/10.1063/5.0031480

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 24