Electrical Characterization of Thermally Activated Defects in n -Type Float-Zone Silicon (2021)
Attributed to:
Gettering of impurities in silicon: delivering quantitative understanding to improve photovoltaics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/jphotov.2020.3031382
Publication URI: http://dx.doi.org/10.1109/jphotov.2020.3031382
Type: Journal Article/Review
Parent Publication: IEEE Journal of Photovoltaics
Issue: 1