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Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers (2021)

First Author: Molas M

Attributed to: Engineering van der Waals heterostructures: from atomic level layer-by-layer assembly to printable innovative devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1039/d0fd00007h

PubMed Identifier: 33325929

Publication URI: http://europepmc.org/abstract/MED/33325929

Type: Journal Article/Review

Parent Publication: Faraday Discussions

ISSN: 1359-6640