Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers. (2021)
Attributed to:
Engineering van der Waals heterostructures: from atomic level layer-by-layer assembly to printable innovative devices
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1039/d0fd00007h
PubMed Identifier: 33325929
Publication URI: http://europepmc.org/abstract/MED/33325929
Type: Journal Article/Review
Volume: 227
Parent Publication: Faraday discussions
ISSN: 1359-6640