Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar (\({11\overline{2}2}\)) and Non-Polar (\({11\overline{2}0}\)) GaN Nanorods (2020)
Attributed to:
Manufacturing of nano-engineered III-N semiconductors: Equipment Business Case
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.3390/nano10122562
PubMed Identifier: 33419314
Publication URI: http://europepmc.org/abstract/MED/33419314
Type: Journal Article/Review
Parent Publication: Nanomaterials
Issue: 12
ISSN: 2079-4991