Carbon cluster formation and mobility degradation in 4H-SiC MOSFETs (2021)

First Author: Zhang Z
Attributed to:  Integration of Novel Materials in Spintronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0037241

Publication URI: http://dx.doi.org/10.1063/5.0037241

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 3