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Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon. (2021)

First Author: Ghosh S

Attributed to: Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acsaelm.0c00966

PubMed Identifier: 33644761

Publication URI: http://europepmc.org/abstract/MED/33644761

Type: Journal Article/Review

Volume: 3

Parent Publication: ACS applied electronic materials

Issue: 2

ISSN: 2637-6113