Electrical properties of (11-22) Si:AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy (2020)

First Author: Foronda H
Attributed to:  University of Strathclyde - Equipment Account" funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0031468

Publication URI: http://dx.doi.org/10.1063/5.0031468

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 22