Role of interface potential barrier, Auger recombination and temporal coherence in In 0.5 Ga 0.5 As/GaAs quantum dot-based p-i-n light emitting diodes (2019)

First Author: Singh M
Attributed to:  Membership of the UK to the European Magnetic Field Laboratory funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/aaf61c

Publication URI: http://dx.doi.org/10.1088/1361-6463/aaf61c

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 9