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Characterization of 6.1 Å III-V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy (2016)

First Author: Craig A

Attributed to: Silicon based QD light sources and lasers funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2015.11.025

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2015.11.025

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth