Characterization of 6.1 Å III-V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy (2016)
Attributed to:
Silicon based QD light sources and lasers
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2015.11.025
Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2015.11.025
Type: Journal Article/Review
Parent Publication: Journal of Crystal Growth