Temperature-Dependent Photoluminescence Characteristics of InAs/GaAs Quantum Dots Directly Grown on Si Substrates (2016)
Attributed to:
Silicon based QD light sources and lasers
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/0256-307x/33/4/044207
Publication URI: http://dx.doi.org/10.1088/0256-307x/33/4/044207
Type: Journal Article/Review
Parent Publication: Chinese Physics Letters
Issue: 4