Heteroepitaxial integration of InAs/InAsSb type-II superlattice barrier photodetectors onto silicon (2020)
Attributed to:
Novel InSb quantum dots monolithically grown on silicon for low cost mid-infrared light emitting diodes
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1117/12.2568741
Publication URI: http://dx.doi.org/10.1117/12.2568741
Type: Conference/Paper/Proceeding/Abstract