Minority carrier traps in Czochralski-grown p-type silicon crystals doped with B, Al, Ga, or In impurity atoms (2020)

First Author: De Guzman J
Attributed to:  SuperSilicon PV: extending the limits of material performance funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/pvsc45281.2020.9300860

Publication URI: http://dx.doi.org/10.1109/pvsc45281.2020.9300860

Type: Conference/Paper/Proceeding/Abstract