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Comprehensive Study of Cross-Section Dependent Effective Masses for Silicon Based Gate-All-Around Transistors (2019)

First Author: Badami O

Attributed to: Quantum Simulator for Entangled Nano-Electronics (QSEE) funded by ISCF

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.3390/app9091895

Publication URI: http://dx.doi.org/10.3390/app9091895

Type: Journal Article/Review

Parent Publication: Applied Sciences

Issue: 9