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Multi-Scale Simulation of Transport via a Mo/n + -GaAs Schottky Contact (2013)

First Author: Aldegunde M

Attributed to: Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1557/opl.2013.1057

Publication URI: http://dx.doi.org/10.1557/opl.2013.1057

Type: Journal Article/Review

Parent Publication: MRS Proceedings