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Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure. (2017)

First Author: Munde MS
Attributed to:  Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1038/s41598-017-09565-8

PubMed Identifier: 28839255

Publication URI: http://europepmc.org/abstract/MED/28839255

Type: Journal Article/Review

Volume: 7

Parent Publication: Scientific reports

Issue: 1

ISSN: 2045-2322