DFT/NEGF study of discrete dopants in Si/III-V 3D FET. (2019)

First Author: Wilson LSJ
Attributed to:  Quantum Simulations of Future Solid State Transistors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-648x/aaffb2

PubMed Identifier: 30654350

Publication URI: http://europepmc.org/abstract/MED/30654350

Type: Journal Article/Review

Volume: 31

Parent Publication: Journal of physics. Condensed matter : an Institute of Physics journal

Issue: 14

ISSN: 0953-8984