A Comparative Study of Defect Energy Distribution and Its Impact on Degradation Kinetics in GeO 2 /Ge and SiON/Si pMOSFETs (2016)

First Author: Ma J
Attributed to:  Mechanisms and Control of Resistive Switching in Dielectrics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ted.2016.2597540

Publication URI: http://dx.doi.org/10.1109/ted.2016.2597540

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Electron Devices

Issue: 10