4H-SiC trench MOSFET with integrated fast recovery MPS diode (2018)
Attributed to:
Underpinning Power Electronics switch optimisation Theme
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1049/el.2017.3198
Publication URI: http://dx.doi.org/10.1049/el.2017.3198
Type: Journal Article/Review
Parent Publication: Electronics Letters
Issue: 3