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Stability, geometry and electronic properties of BH n (n = 0 to 3) radicals on the Si{0 0 1}3 × 1:H surface from first-principles. (2020)

First Author: Fang CM

Attributed to: Future Liquid Metal Engineering Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-648x/ab6e43

PubMed Identifier: 31962296

Publication URI: http://europepmc.org/abstract/MED/31962296

Type: Journal Article/Review

Volume: 32

Parent Publication: Journal of physics. Condensed matter : an Institute of Physics journal

Issue: 23

ISSN: 0953-8984