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Modeling of Grazing-Incidence X-ray Diffraction from Naphthyl End-Capped Oligothiophenes in Organic Field-Effect Transistors (2020)

First Author: Winokur M

Attributed to: XMaS: The UK Materials Science Facility at the ESRF funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1021/acs.cgd.0c00281

Publication URI: http://dx.doi.org/10.1021/acs.cgd.0c00281

Type: Journal Article/Review

Parent Publication: Crystal Growth & Design

Issue: 6