Temperature and band gap dependence of GaAsBi p-i-n diode current-voltage behaviour (2021)
Attributed to:
Plugging the 1 eV band gap gap: GaAsBiN as a highly mismatched alloy for multi-junction photovoltaics.
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/abe4ff
Publication URI: http://dx.doi.org/10.1088/1361-6463/abe4ff
Type: Journal Article/Review
Parent Publication: Journal of Physics D: Applied Physics
Issue: 19