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Temperature and band gap dependence of GaAsBi p-i-n diode current-voltage behaviour (2021)

First Author: Richards R

Attributed to: Plugging the 1 eV band gap gap: GaAsBiN as a highly mismatched alloy for multi-junction photovoltaics. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/abe4ff

Publication URI: http://dx.doi.org/10.1088/1361-6463/abe4ff

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 19