InGaAs/AlAs/GaAs metamorphic asymmetric spacer layer tunnel (mASPAT) diodes for microwaves and millimeter-waves detection (2020)
Attributed to:
Future Compound Semiconductor Manufacturing Hub
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/5.0010369
Publication URI: http://dx.doi.org/10.1063/5.0010369
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 19