InGaAs/AlAs/GaAs metamorphic asymmetric spacer layer tunnel (mASPAT) diodes for microwaves and millimeter-waves detection (2020)

First Author: Salhi A
Attributed to:  Future Compound Semiconductor Manufacturing Hub funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/5.0010369

Publication URI: http://dx.doi.org/10.1063/5.0010369

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 19