Impact of ex-situ annealing on strain and composition of MBE grown GeSn (2020)
Attributed to:
BO-and Monolithic Quantum Dot Semiconductor Optical Amplifier on Silicon
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1361-6463/abae94
Publication URI: http://dx.doi.org/10.1088/1361-6463/abae94
Type: Journal Article/Review
Parent Publication: Journal of Physics D: Applied Physics
Issue: 48