Paralleling insulated-gate bipolar transistors in the H-bridge structure to reduce current stress (2021)

First Author: Memarian Sorkhabi M

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1007/s42452-021-04420-y

Publication URI: http://dx.doi.org/10.1007/s42452-021-04420-y

Type: Journal Article/Review

Parent Publication: SN Applied Sciences

Issue: 4