Paralleling insulated-gate bipolar transistors in the H-bridge structure to reduce current stress. (2021)

First Author: Memarian Sorkhabi M
Attributed to:  University of Oxford – Confidence in Concept 2019 funded by MRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1007/s42452-021-04420-y

PubMed Identifier: 33748674

Publication URI: http://europepmc.org/abstract/MED/33748674

Type: Journal Article/Review

Volume: 3

Parent Publication: SN applied sciences

Issue: 4

ISSN: 2523-3963