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Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric. (2019)

First Author: Shen Z

Attributed to: Mechanisms and Control of Resistive Switching in Dielectrics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.3390/mi10070446

PubMed Identifier: 31269730

Publication URI: http://europepmc.org/abstract/MED/31269730

Type: Journal Article/Review

Volume: 10

Parent Publication: Micromachines

Issue: 7

ISSN: 2072-666X