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Characteristics of Ni/AlO x /Pt RRAM devices with various dielectric fabrication temperatures (2019)

First Author: Shen Z

Attributed to: Mechanisms and Control of Resistive Switching in Dielectrics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/icicdt.2019.8790838

Publication URI: http://dx.doi.org/10.1109/icicdt.2019.8790838

Type: Conference/Paper/Proceeding/Abstract