Characteristics of Ni/AlO x /Pt RRAM devices with various dielectric fabrication temperatures (2019)
Attributed to:
Mechanisms and Control of Resistive Switching in Dielectrics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/icicdt.2019.8790838
Publication URI: http://dx.doi.org/10.1109/icicdt.2019.8790838
Type: Conference/Paper/Proceeding/Abstract