Plasma-Enhanced Combustion-Processed Al 2 O 3 Gate Oxide for In 2 O 3 Thin Film Transistors (2019)

First Author: Liu Q

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/icicdt.2019.8790939

Publication URI: http://dx.doi.org/10.1109/icicdt.2019.8790939

Type: Conference/Paper/Proceeding/Abstract