Band Line-up Investigation of Atomic Layer Deposited TiAlO and GaAlO on GaN (2020)

First Author: Das P
Attributed to:  High permittivity dielectrics on Ge for end of Roadmap application funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1149/2162-8777/aba4f4

Publication URI: http://dx.doi.org/10.1149/2162-8777/aba4f4

Type: Journal Article/Review

Parent Publication: ECS Journal of Solid State Science and Technology

Issue: 6