Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices (2020)
Attributed to:
High permittivity dielectrics on Ge for end of Roadmap application
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/access.2020.2995906
Publication URI: http://dx.doi.org/10.1109/access.2020.2995906
Type: Journal Article/Review
Parent Publication: IEEE Access